Prof. Arnab Bhattacharya, DCMPMS Tata Institute of Fundamental Research
The optoelectronic devices that drive today's technological world critically depend on combining various semiconductor materials, typically of different bandgaps. These devices have many layers of materials, ranging from few-atomic layers, to a few µm in thickness. Semiconductor quantum structures – ultra-thin film, wire, or dot-like configurations of nm size are at the heart of most devices. The growth of different compound semiconductors heterojunctions is a key requirement for devices. Our lab specializes in the epitaxial growth and characterization of bulk and low-dimensional III-V semiconductors, particularly the III-Nitrides, and their use in device structures.
Our core expertise is in the epitaxial growth of compound semiconductors via a technique called metalorganic vapour phase epitaxy (MOVPE). Our lab has two MOVPE systems, a horizontal reactor for As/P materials and a 3x2” closed-coupled showerhead MOVPE system used mainly for III-Nitrides. We study the structural, optical and electrical properties of both bulk and low-dimensional III-V semiconductors (quantum wells/ wires/dots) using and have access to a wide range of characterization techniques such as high-resolution X-ray diffraction, photoluminescence and Raman spectroscopies, and electron microscopy.
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