Arnab Bhattacharya

Professor Arnab Bhattacharya

Prof Arnab Bhattacharya
Office : C-234
Office Phone : 22782829
Lab : WG-05
Lab Phone : 22782517
Email : arnab[at]tifr.res.in
Lab Website : Click Here

 

 

Epitaxial growth of compound semiconductors by MOVPE, III-Nitrides, Nanowires, Semiconductor Lasers and Optoelectronic Devices.

 
  1. P. Gupta et al., “MOVPE growth of semipolar III-nitride semiconductors on CVD graphene”, J. Cryst. Growth. in press, (2013) DOI: 10.1016/j.jcrysgro.2013.03.020
  2. T. S. Abhilash et al., “Wide Bandwidth Nanowire Electromechanics on Insulating Substrates at Room Temperature”, Nano. Lett. 12, 6432 (2012) DOI: 10.1021/nl303804e
  3. S. Dhara et al., “Facile fabrication of lateral nanowire wrap-gate devices with improved performance”, Appl. Phys. Lett. 99, 173101 (2011)
  4. ] M.R. Laskar et al., “Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN”, Appl. Phys. Lett., 98, 181108 (2011)
  5. M R. Laskar et al., “Distorted wurtzite unit cells: Determination of lattice parameters of non-polar a-plane AlGaN and estimation of solid phase Al content”, J. Appl. Phys., 109, 013107 (2011)

Research Scholars

  1. Carina Maliakkal

Post Doc Fellow

  1. Bhaktiben Parekh

Staff Members

  1. Amit Shah
  2. Azizur Rehman
  3. Mahesh Gokhale

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