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Novel route for fabricating nanowire transistors

False coloured scanning electron microscope image of nanowire wrap-gate transistor

False coloured scanning electron microscope image of nanowire wrap-gate transistor

Field effect transistors (FETs) are switches that form the basis for electronics all around us - from high performance computers to mobile devices. A field effect transistor is like a tap, or a valve, where the turning of the tap knob controls the flow of water. In the case of transistor the gate electrode is the knob that modifies the flow of electrons between two terminals called the source and the drain. In order to make faster transistors that operate at high frequencies one has to make them really small, and also be able to rapidly turn off and on the flow of electric current which requires an efficient gate electrode. Such devices are fabricated from tiny semiconductor nanowires, 1000 times narrower than a human hair, and need to have gate electrodes with a high capacitive coupling to the semiconducting channel that connects the source and the drain electrodes. These devices are important not only from technological standpoint of future devices but are also interesting as they provide a unique platform to study the nature of the quantum mechanical behaviour of electrons flowing in a nanowire.

At TIFR, a team of researchers has shown that this efficient gate for a nanowire can be fabricated rather simply using technology that is compatible with today's fabrication technology. This technique can have a significant impact on how the transistors will be fabricated in the future. This work is the result of a close collaboration between two groups with expertise in "Nanoelectronics" and "semiconductor optoelectronics" . The article reporting this work was featured on the cover of the journal "Applied Physics Letters" and also featured in 12th January 2012 issue of "Nature" .

For further details about this work, please email Mandar Deshmukh ( or Arnab Bhattacharya (