Welcome to Prof. Arnab Bhattacharya's Group
The optoelectronic devices that drive today's technological world critically depend on combining various semiconductor materials, typically of different bandgaps. These devices have many layers of materials, ranging from few-atomic layers, to a few µm in thickness.
Semiconductor quantum structures – ultra-thin film, wire, or dot-like configurations of nm size are at the heart of most devices. The growth of different compound semiconductors heterojunctions is a key requirement for devices.
Our lab specializes in the epitaxial growth and characterization of bulk and low-dimensional III-V semiconductors, particularly the III-Nitrides, and their use in device structures.
Our core expertise is in the epitaxial growth of compound semiconductors via a technique called metalorganic vapour phase epitaxy (MOVPE). Our lab has two MOVPE systems, a horizontal reactor for As/P materials and a 3x2” closed-coupled showerhead MOVPE system used mainly for III-Nitrides.
We study the structural, optical and electrical properties of both bulk and low-dimensional III-V semiconductors (quantum wells/ wires/dots) using and have access to a wide range of characterization techniques such as high-resolution XRD, photoluminescence and Raman spectroscopies, and electron microscopy.
3 x2 " showerhead MOVPE reactor dedicated to grow III-Nitride thin films, quantum well, quantum dots and nanowires.
Horizontal CVD Reactor for growing III-Arsenides, III-Phosiphides related thin films, quantum well, quantum dots, nanowires.
Panalytical X'Pert MRD system for High Resolution X-ray diffraction measurements of epitaxially grown thin films.
WiTec alpha 300 confocal Raman spectroscopy to study the vibrational properties of the thin films.
Various device processing equipments like Optical and e-beam lithography, ICP-RIE and ICP-CVD.
High Resolution Transmission electron spectrocopy imaging lab to study interface.
Synthesis and characterization of Cu 3 SbS 4 thin films grown by co-sputtering metal precursors and subsequent sulfurization.
Rahman AA, Hossian E, Vaishnav H, Parmar JB, Bhattacharya A, Sarma A.
Materials Advances. 2020;1(9):3333-8.
Doping controlled Fano resonance in bilayer 1T′-ReS 2: Raman experiments and first-principles theoretical analysis.
Das S, Prasad S, Chakraborty B, Jariwala B, Shradha S, Muthu DV, Bhattacharya A, Waghmare UV, Sood AK.
Recharging and rejuvenation of decontaminated N95 masks
E Hossain, S Bhadra, H Jain, S Das, A Bhattacharya, S Ghosh, D Levine
Physics of Fluids. 2020 Sep 1;32(9):093304.
Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma
AP Shah, A Azizur Rahman, A Bhattacharya
JVST A: 2020 Jan 17;38(1):013001.
Large-area, thermally-sulfurized WS2 thin films: Control of growth direction and use as a substrate for GaN epitaxy
E Hossain, AA Rahman, AP Shah, B Chalke, A Bhattacharya
Semiconductor Science and Technology 2020 35, 035011
Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE
Emroj Hossain, A Azizur Rahman, Mahesh Gokhale, Ruta Kulkarni, Rajib Mondal, Arumugam Thamizhavel, Arnab Bhattacharya
Journal of Crystal Growth 2019 524, 125165.
Laser induced structural phase transitions in Cu3SbS4 thin films
AA Rahman, E Hossain, H Vaishnav, A Bhattacharya, A Sarma
Semiconductor Science and Technology 2019 34 (10), 105026.
Growth, structural and optical characterization of wurtzite GaP nanowires
Carina B Maliakkal, Mahesh Gokhale, Jayesh Parmar, Rudheer Bapat, Bhagyashree Chalke, Sandip Ghosh, Arnab Bhattacharya
Nanotechnology 2019 30 254002
Optimization of Gas Ambient for High Quality β-Ga2O3 Single Crystals Grown by the Optical Floating Zone Technique
Emroj Hossain, Ruta Kulkarni, Rajib Mondal, Swati Guddolian, A Azizur Rahman, Arumugam Thamizhavel, Arnab Bhattacharya
ECS Journal of Solid State Science and Technology 8 (7), Q3144-Q3148
Maheshwar R GokhaleScientific Officer Extn: 2855 firstname.lastname@example.org
Epitaxial growth of III-V materials, HRXRD.
Amit P ShahScientific Officer Extn: 2855 email@example.com
Semiconductor device fabrication and processing.
A Azizur RahmanScientific Officer Extn: 2517 firstname.lastname@example.org
Growth and characterizatio of III-Nitride in MOVPE reactor.
Maneesha NResearch Scholar Extn: 2517 email@example.com
Ga2O3 single crystal growth and doping studies.
Vishal SuriyanarayananResearch Scholar Extn: 2517 firstname.lastname@example.org
Structural characterization Ga2O3 single crystals.
Emroj HossainPh.d Alumni Extn: - email@example.com
GaN on Ga2O3, GaN on WS2, WS2 nanotubes.
Carina B. MaliakkalPh.d Alumni Extn:- firstname.lastname@example.org
Post doctral Researcher in Lund University, Sweden.
Priti GuptaPh.d Alumni Extn:- email@example.com
Guest Research Scientist, Technical University-Berlin.
Bhakti JariwalaPost doc Alumni Extn:- firstname.lastname@example.org
Pennsylvania State University, Materials Research Institute. .
Masihhur LaskarPh.d Alumni Extn:- email@example.com
Researcher, University of Wisconsin-Madison, Wisconsin. .
Sajal DharaPh.d Alumni Extn:- firstname.lastname@example.org
Associate Professor, Indian Institute of Technology- Kharagpur.
Abdul KadirPh.d Alumni Extn:- email@example.com
Researcher, Singapore-MIT Alliance for Research and Technology (SMART).
Feel free to contact us for Research and other activities.
Prof. Arnab Bhattacharya
Chair, Dept. of Condensed Matter Physics and Material Science
Chair, Science Popularization and Public Outreach
Tata Institute of Fundamental Research
Homi bhabha Road,
Mumbai 400 005